Article citationsMore>>

Fossum, J.G. and Lee, D.S. (1952) A Physical Model for the Dependence of Carrier Lifetime on Doping Density in Non-Degenerate Silicon. Solid-State Electronics, 15, 741-747.
https://doi.org/10.1016/0038-1101(82)90203-9

has been cited by the following article:

• TITLE: Determination of the Base Optimum Thickness of Back Illuminated (n+/p/p+) Bifacial Silicon Solar Cell, by Help of Diffusion Coefficient at Resonance Frequency

  AUTHORS: Mohamed Yaya Teya, Ousmane Sow, Khady Loum, Ibrahima Diatta, Gora Diop, Youssou Traore, Mamadou Wade, Gregoire Sissoko

  KEYWORDS: Bifacial Silicon Solar Cell, Frequency, Magnetic Field, Wavelength-Recombination Velocity, Base Thickness

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.15 No.2, February 28, 2023

  ABSTRACT: The bifacial silicon solar cell subjected to a magnetic field, is illuminated by the back side by a monochromatic light in frequency modulation, with high absorption, At minority carriers diffusion coefficient resonance frequency, a graphical study of the expressions of recombination velocity on the rear side is carried out. The optimum thickness of the base of the bifacial solar cell is deduced for each resonance frequency.