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has been cited by the following article:
TITLE: Dopant Implantation into the Silicon Substrate with Non-Planar Surface
AUTHORS: Gennady A. Tarnavsky, Evgenii V. Vorozhtsov
KEYWORDS: Computer Modeling, Silicon Doping, Implantation, Donor, Acceptor Dopants
JOURNAL NAME: Energy and Power Engineering, Vol.2 No.2, May 28, 2010
ABSTRACT: The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.