Article citationsMore>>

S. Monfray, T. Skotnicki, B. Tavel, et al., “Highly-Performant 38 nm SON (Silicon-On-Nothing) P-MOSFETs with 9 nm-Thick Channels,” IEEE Silicon-on-Insulator Conference Proceedings, 2002, pp. 22-25.

has been cited by the following article:

• TITLE: Dopant Implantation into the Silicon Substrate with Non-Planar Surface

  AUTHORS: Gennady A. Tarnavsky, Evgenii V. Vorozhtsov

  KEYWORDS: Computer Modeling, Silicon Doping, Implantation, Donor, Acceptor Dopants

  JOURNAL NAME: Energy and Power Engineering, Vol.2 No.2, May 28, 2010

  ABSTRACT: The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.