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H. Runge, “Distribution of Implanted Ions under Arbitrarily Shaped Mask,” Physical Status Solidi, Vol. 39(a), 1977, pp. 595-607.

has been cited by the following article:

• TITLE: Dopant Implantation into the Silicon Substrate with Non-Planar Surface

  AUTHORS: Gennady A. Tarnavsky, Evgenii V. Vorozhtsov

  KEYWORDS: Computer Modeling, Silicon Doping, Implantation, Donor, Acceptor Dopants

  JOURNAL NAME: Energy and Power Engineering, Vol.2 No.2, May 28, 2010

  ABSTRACT: The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.