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Dean, C.R., Young, A.F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., et al. (2010) Boron Nitride Substrates for High-Quality Graphene Electronics. Nat Nanotechnol, 5, 722-726. https://doi.org/10.1038/nnano.2010.172

has been cited by the following article:

• TITLE: High-Throughput Growth of Hexagonal Boron Nitride Film Using Porous-Structure Isolation Layer

  AUTHORS: Ruitao Jia, Fangzhu Qing, Xuesong Li

  KEYWORDS: Hexagonal Boron Nitride, Chemical Vapor Deposition, Porous Structure Isolation Layer, High Throughput

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.11 No.3, March 31, 2023

  ABSTRACT: Chemical vapor deposition is considered as the most hopeful method for the synthesis of large-area high-quality hexagonal boron nitride on the substrate of catalytic metal. However, the size the hexagonal boron nitride films are limited to the size of growth chamber, which indicates a lower production efficiency. In this paper, the utilization efficiency of growth chamber is highly improved by alternately stacking multiple pieces of Cu foils and carbon fiber surface felt with porous structure. Uniform and continuous hexagonal boron nitride films are prepared on Cu foils through chemical vapor deposition utilizing ammonia borane as the precursor. This work develops a simple and practicable method for high-throughput preparation of hexagonal boron nitride films, which could contribute to the industrial application of hexagonal boron nitride.