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Irikura, K., Muroi, M., Yamada, A., Matsuo, M., Habuka, H., Ishida, Y., Ikeda, S. and Hara, S. (2018) Advantages of a Slim Vertical Gas Channel at High SiHCl3 Concentrations for Atmospheric Pressure Silicon Epitaxial Growth. Materials Science in Semiconductor Processing, 87, 13-18.
https://doi.org/10.1016/j.mssp.2018.07.006

has been cited by the following article:

• TITLE: Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

  AUTHORS: Yuki Kamochi, Atsuhiro Motomiya, Hitoshi Habuka, Yuuki Ishida, Shin-Ichi Ikeda, Shiro Hara

  KEYWORDS: Chemical Vapor Deposition, Boron-Silicon Film, Boron Trichloride, Dichlorosilane

  JOURNAL NAME: Advances in Chemical Engineering and Science, Vol.13 No.1, January 11, 2023

  ABSTRACT: A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃ in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.