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Caputo, D., De Cerare, G., Irrera, F., Palma, F. and Tucci, M. (1994) Characterization of Intrinsic a-Si:H in p-i-n Devices by Capacitance Measurements: Theory and Experiments. Journal of Applied Physics, 76, 3524-3541.
https://doi.org/10.1063/1.357435

has been cited by the following article:

• TITLE: Influence of the Magnetic Field on the Transient Decay of the Density of Charge Carriers in a Silicon Photocell with Vertical Multijunctions Connected in Series Placed in Open Circuit

  AUTHORS: Papa Monzon Alassane Samake, Papa Touty Traore, Babou Dione, Pape Diop, Fatimata Ba, Mamadou Wade

  KEYWORDS: Silicon Solar Cell-Series, Vertical Junction, Recombination Velocities, Magnetic Field, Base Thickness (P), Eigenvalues, Decay Time Constant

  JOURNAL NAME: Energy and Power Engineering, Vol.14 No.12, December 28, 2022

  ABSTRACT: This study investigates the effect of the magnetic field on the transient density of excess minority charge carriers in the base of a series-connected vertical junction silicon solar cell. The solar cell is presented in open circuit transient operation. The magnetic field through the Laplace force which deflects the photogenerated carriers from their initial trajectory towards the lateral surfaces reducing their mobility, diffusion and conduction, will certainly influence the decay time of the transient regime. The transient density of excess minority carriers in the base is a sum of infinite terms whose decay time of the different harmonics is studied.