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Vaitkus, Yu.Yu., Yuldashev, N.Kh. and Otazhonov, S.M. (2005) On the Mechanism of Formation of High-Voltage Photo-EMF in Thin Obliquely Deposited CdTe:Ag Films with Intrinsic and Impurity Absorption. Physical Surface Engineering, 3, 219-227.

has been cited by the following article:

• TITLE: Photosensitivity Spectra of Thin Films from a CdSexS1-x Solid Solution

  AUTHORS: Tokhirbek Imomalievich Rakhmonov

  KEYWORDS: Thin Polycrystalline Film, Solid Solution, Photoconductivity, Activation Energy Spectrum, Substrate Temperature, Deep Impurity Centers

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.10 No.12, December 28, 2022

  ABSTRACT: The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSexS1-x solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Еv + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Еv + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Еc - (0.19 ± 0.02) eV. CdSe0.8S0.2 films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.