TITLE:
Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n+/p/p+) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination
AUTHORS:
Gora Diop, Ousmane Sow, Moustapha Thiame, Richard Mane, Ibrahima Diatta, Khady Loum, Sega Gueye, Mamadou Wade, Gregoire Sissoko
KEYWORDS:
Silicon Solar Cell-Diffusion Coefficient, Recombination Velocity, Absorption Coefficient, Magnetic Field-Temperature-Thickness
JOURNAL NAME:
Journal of Electromagnetic Analysis and Applications,
Vol.14 No.8,
August
31,
2022
ABSTRACT: The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in reso-nance at temperature (Topt). For this same magnetic field, the diffusion coeffi-cient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ωc). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n+/p/p+), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.