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Matsunami, H., Nishino, S., Odaka, M. and Tanaka, T. (1975) Epitxial Growth of α-SiC Layers by Chemical Vapor Deposition Technique. In: Cullen, G.W., Kaldis, E., Parker, R.L. and Rooymans, C.J.M., Eds., Vapour Growth and Epitaxy, Elsevier, Amsterdam, 72-75.
https://doi.org/10.1016/B978-1-4831-9854-5.50014-8

has been cited by the following article:

• TITLE: Property Analysis of SiC-Crystals Grafted with Graphene Using Molecular Dynamics Simulations

  AUTHORS: Taraneh Lewtschenko, Maya Pagel, Niklas Wenzel, Christina Oligschleger

  KEYWORDS: Molecular Dynamics, Silicon Carbides, Graphene, Nano-Systems

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.10 No.11, November 10, 2022

  ABSTRACT: Silicon carbide and graphene possess extraordinary chemical and physical properties. Here, these different systems are linked and the changes in structural and dynamic properties are investigated. For the simulations performed a classical molecular dynamic (MD) approach was used. In this approach, a graphene layer (N = 240 atoms) was grafted at different distances on top of a 6H-SiC structure (N = 2400 atoms) and onto a 3C-SiC structure (N = 1728 atoms). The distances between the graphene and the 6H are 1.0, 1.3 and 1.5 Å and the distances between the graphene layer and the 3C-SiC are 2.0, 2.3, and 2.5 Å. Each system has been equilibrated at room temperature until no further relaxation was observed. The 6H-SiC structure in combination with graphene proves to be more stable compared to the combination with 3C-SiC. This can be seen well in the determined energies. Pair distribution functions were influenced slightly by the graphene layer due to steric and energetic changes. This becomes clear from the small shifts of the C-C distances. Interactions as well as bonds between graphene and SiC lead to the fact that small shoulders of the high-frequency SiC-peaks are visible in the spectra and at the same time the high-frequency peaks of graphene are completely absent.