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Zachariah, E.S., Gopalakrishnakone, P. and Neuzil, P. (2006) Immunologically Sensitive Field-Effect Transistors. In: Webster, J.G., Ed., Encyclopedia of Medical Devices and Instrumentation, John Wiley & Sons, Inc., Hoboken, 98-110.
https://doi.org/10.1002/0471732877.emd141

has been cited by the following article:

• TITLE: ISFET Based Immunosensor

  AUTHORS: Ferdinand Gasparyan, Lusine Gasparyan, Vahan Simonyan

  KEYWORDS: Biosensor, ISFET, Antibody, Virus, Sensitivity

  JOURNAL NAME: Open Journal of Biophysics, Vol.12 No.4, October 25, 2022

  ABSTRACT: A new design of an immunosensor for viral molecules based on the ISFET nanoscale structure has been proposed. Physical processes take place inimmunosensor are modeled. The effect of modulation of the surface potential of the interface between a semiconductor depleted layer (channel) and a dielectric during the interaction and immobilization of viral molecules was used. Analytical expression for the source-drain current of ISFET as a function of virus types and concentration is presented and analyzed. Dependency of the source-drain current vs. concentration of viruses is analyzed for the COVID-19 virus.