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Yonggang, P., Zhongfu, X., Xiaoquin, Z. and Yewen, Z. (1999) Charge Storage Characteristic for Double Layer of Si/Sub 3/N/Sub 4//SiO/Sub 2/ and Single Layer of Si/Sub 3/N/Sub 4/. 10th International Symposium on Electrets, Delphi, 22-24 September 1999, 391-394.
https://doi.org/10.1109/ISE.1999.832069

has been cited by the following article:

• TITLE: Application of Corona Charge Deposition Technique in Thin Film Industry

  AUTHORS: Ila Prasad

  KEYWORDS: Corona Charge, Microchip Technology, Thin Film, Corona Grown Oxide

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.12 No.2, June 30, 2022

  ABSTRACT: With the advent of new materials, microchip industry is investigating new architecture to further scale down the device size. New technologies are on the way to achieving this goal without compromising with the device’s performance and benefits. In this new scenario, corona charge deposition technique (CCDT) has become an indispensable part of the thin film industry. Due to the non-invasive and non-destructive nature of corona charge ions, they are effectively being used to improve the device properties. They are also useful to understand the electrical properties of insulators and other materials. Corona-Kelvin non-contact metrology or the C-KM is the most recent development in this field. In this review, the applications of corona charge deposition technique in the semiconductor industry have been reviewed. Further, the methodology involved is described. The advances as well as challenges and improvements including the future research are also discussed.