TITLE:
Practical Method for Designing Gas Conditions of Atomic Layer Deposition
AUTHORS:
Linsheng Xie, Hitoshi Habuka, Harunori Ushikawa
KEYWORDS:
Atomic Layer Deposition, Gas Temperature Uniformity, Gas Residence Time, Computational Fluid Dynamics
JOURNAL NAME:
Advances in Chemical Engineering and Science,
Vol.12 No.4,
October
17,
2022
ABSTRACT: In order to effectively develop the atomic layer
deposition (ALD) reactor and process, having huge potentials and applications
in the advanced technology fields, a practical design method of the gas
conditions for the ALD was studied using computational fluid dynamics (CFD).
The design method consisting of the following four steps was studied. 1) At a low gas pressure
producing no gas recirculation, the maximum difference in the gas phase
temperature from the sample stage temperature, ΔT, was obtained at
various chamber wall temperatures. 2) The ΔT value was studied at various gas pressures producing the
gas recirculation. 3) For determining
the applicable process conditions, contour diagrams of the temperature
uniformity were obtained utilizing the temperature uniformity equations
consisting of various process parameters. 4) The relationships of the maximum gas residence
time with the gas flow rate and the gas pressure were obtained. The process in
this study is expected to be practical for designing the thermal and gas flow
conditions for achieving a fast ALD.