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Kim, H.-S., Jeonm, S.H., Park, J.S., Kim, T.S., Son, K.-S., Seon, J.-B., Seo, S.-J., Kim, S.-J., Lee, E., Chung, J.G., Lee, H., Han, S., Ryu, M., Lee, S.Y. and Kim, K. (2013) Anion Control as a Strategy to Achieve High-Mobility and High-Stability Oxide Thin-Film Transistors. Scientific Reports, 3, Article No. 1459.
https://doi.org/10.1038/srep01459

has been cited by the following article:

• TITLE: Characterisation of Zinc Oxynitride Thin Films Prepared Using Zinc(II) Complex of Hexamethylenetetramine as the Precursor

  AUTHORS: Olumide Oluwole Akinwunmi, Oluwaseun Philip Adelabu, Adetokunbo Temitope Famojuro, Olakunle A. Akinwumi, Priscilla Oluwatumilara Olaopa, Kehinde Folorunso Olafisan, Ezekiel Oladele Bolarinwa Ajayi

  KEYWORDS: Zinc Oxynitride, Metal Organic Chemical Vapour Deposition (MOCVD), Precursor, Characterisation, Thin Film

  JOURNAL NAME: Materials Sciences and Applications, Vol.13 No.8, August 19, 2022

  ABSTRACT: A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organic Chemical Vapour Deposition (MOCVD) technique at the deposition temperature of 370°C and 390°C, respectively. The Fourier Transform Infrared Spectroscopy (FTIR) was used to determine the functional groups in the precursor, with stretching frequency for O-H, N-H, and C-H observed. The deposited films were characterized using UV-Visible Spectroscopy, Scanning Electron Microscopy (SEM), Elemental diffraction X-ray (EDX), and X-ray Diffractometer (XRD). A direct bandgap of 3.15 eV and 3.18 eV was obtained from the film deposited at 370°C and 390°C, respectively, using the Envelope Method. In comparison, a bandgap of 3.19 eV and 3.21 eV was obtained using the absorption spectrum fitting (ASF) method. The SEM revealed that the film is homogeneous, dense, and compact, composed of cluster grains. The EDX confirmed the presence of Zinc, Nitrogen and Oxygen. The X-ray Diffraction indicated the polycrystalline nature of the film.