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Thiam, N., Diao, A., Wade, M., Ndiaye, M., Zerbo, I., Sarr, M., Maîga, A.S. and Sissoko, G. (2013) Research Journal of Applied Sciences, Engineering and Technology, 5, 134-141.
https://doi.org/10.19026/rjaset.5.5137

has been cited by the following article:

• TITLE: Effects of the Nature of Boundaries Conditions and Their Truncation Errors on the Distribution of Minority Carriers in Silicon Solar Cell

  AUTHORS: Mamadou Bamba Sene, Mountaga Boiro, Alioune Faye, Amadou Diao, Cheikh Mbow

  KEYWORDS: Transport Equation, Load Carrier Densities, Implicit Scheme, Semiconductor, Discretization

  JOURNAL NAME: Journal of Modern Physics, Vol.13 No.3, March 23, 2022

  ABSTRACT: In this work, the effects of boundaries conditions and truncation errors in the distribution of minority carriers in the semiconductor are studied. It is a one-dimensional digital study of a polycrystalline silicon solar cell under polychromatic illumination in a dynamic state. Starting from the Boltzmann equation of semiconductors, the author establishes the general equation of particle transport. Assumptions made on the latter allow it to give the equation of distribution of minority carriers in a general way in its case to be studied. This dimensioned distribution equation reveals the parameters of influences on the distribution of carriers. It obtains a partial derivative equation for the carrier distribution function. The boundary conditions are then discretized to order one and then to order two. By considering boundary conditions and the nature of the carriers, the author numerically resolves the discretized general equation by assessing the influence of the nature of the boundary conditions and truncation errors and the influence of the discretization step on the density of the charge carriers by setting certain parameters and varying others. The work ends with a conclusion and logical follow-up to this work.