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Tanaka, T., Nagatomo, T., Kawasaki, D., Nishio, M., Guo, Q., Wakahara, A., Yoshida, A. and Ogawa, H. (2005) Preparation of Cu2ZnSnS4 Thin Films by Hybrid Sputtering. Journal of Physics and Chemistry of Solids, 66, 1978-1981.
https://doi.org/10.1016/j.jpcs.2005.09.037

has been cited by the following article:

• TITLE: Crystallochemical Characterizations, Raman Spectroscopy and Studies Nuclear Magnetic Resonance (NMR) of Cu2Zn(Sn, Si)S4 Compounds for Photovoltaic Applications

  AUTHORS: Mohamed Hamdi, Messaoud Benamira

  KEYWORDS: Photovoltaic Cells, Cu2ZnSnS4, Nuclear Magnetic Resonance, Raman Spectroscopy

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.10 No.1, January 24, 2022

  ABSTRACT: In this study, Si-doped Cu2ZnSnS4 compounds (Cu2ZnSn1-xSixS4, 0 ≤ x ≤ 1) were prepared by solid state reaction method for use of materials for photovoltaic cells. The structural and spectroscopic properties of the as-prepared compounds were studied by X-ray diffraction (XRD), 119Sn, 29Si and 65Cu Magic Angle Spinning nuclear magnetic resonance (MAS NMR) and Raman spectroscopy. The Si-substitution in the Sn-site induces three different types of XRD patterns which depend largely on the Si content in the compound. For 0 ≤ x ≤ 0.5, XRD analysis reveals the presence of a pure tetragonal phase of solid solution with I-42m as a space group. Mixed tetragonal and orthorhombic phases were observed for 0.5 1 at high content of Si (x ≥ 0.8). 119Sn MAS NMR spectra show the presence of Sn/Si disorder as a function of the Si content. The 65Cu MAS NMR spectra of the quadratic solid solution confirm the presence of the two copper sites (Cu-2a and Cu-2c) at 780 ppm while in the case of the orthorhombic solid solution samples, a very broad band is observed. The optical properties were investigated of all compounds by UV-Vis diffuse reflectance and the obtained optical band gap values (1.31 to 2.43 eV) confirm a semiconductor character.