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Yamaguchi, M., Masuda, T., Nakado, T., Zushi, Y., Araki, K., Takamoto, T., Okumura, K., Yamada, K., Ota, Y., Nishioka, K., Tanimoto, T., Nakamura, K., Ozaki, R., Kojima, N. and Ohshita, Y. (2021) Importance of Developing Photovoltaics-Powered Vehicles. Energy and Power Engineering, 13, 147-162.
https://doi.org/10.4236/epe.2021.135010

has been cited by the following article:

• TITLE: Approaches for High-Efficiency III-V/Si Tandem Solar Cells

  AUTHORS: Masafumi Yamaguchi, Kan-Hua Lee, Patrick Schygulla, Frank Dimroth, Tatsuya Takamoto, Ryo Ozaki, Kyotaro Nakamura, Nobuaki Kojima, Yoshio Ohshita

  KEYWORDS: High-Efficiency, Solar Cells, Si Tandem, Multi-Junction, Efficiency Analysis

  JOURNAL NAME: Energy and Power Engineering, Vol.13 No.12, December 17, 2021

  ABSTRACT: The Si tandem solar cells are very attractive for realizing high efficiency and low cost. This paper overviews current status of III-V/Si tandem solar cells including our results. The analytical results for efficiency potential of Si tandem solar cells and loss analysis of Si bottom cells as well as bandgap energy optimization of sub-cells are presented. The 2-junction and 3-junction Si tandem solar cells have potential efficiencies of 36% and 42%, respectively. ERE (external radiative efficiency) analysis for Si solar cells is analyzed in order to clarify properties of Si bottom solar cells. Properties of single-crystalline Si heterojunction solar cell fabricated in this study were analyzed. The current status of efficiencies of our Si bottom cell, upper III-V 2-junction solar cell and III-V/Si 3-junction tandem solar cell was shown to be 5.2% and 28.6% and 33.8%. Achievement of Jsc of 12 mA/cm2 for Si bottom cell is necessary to realize high-efficiency 3-junction Si tandem solar cells with an efficiency of more than 37%. In addition, this paper presents ERE analysis of III-V 2-junction upper solar cells for improving III-V/Si 3-junction tandem solar cells. Several ways to improve efficiency of III-V/Si 3-junction tandem solar cells by reducing non-radiative recombination, optical and resistance losses are shown.