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Zheng, M.J., Zhang, G.Z., Wang, X., Wan, J.X., Wu, H. and Liu, C. (2017) Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers. Nanoscale Research Letters, 12, Article No. 267.
https://doi.org/10.1186/s11671-017-2024-x

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