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Cancado, L.G., Jorio, A., Martins Ferreira, E.H., Stavale, F., Achete, C.A., Capaz, R.B., Moutinho, M.V.O., Lombardo, A., Kulmala, T.S. and Ferrari, A.C. (2011) Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies. Nano Letters, 11, 3190-3196.
https://doi.org/10.1021/nl201432g

has been cited by the following article:

• TITLE: Direct Synthesis of Graphene on Silicon at Low Temperature for Schottky Junction Solar Cells

  AUTHORS: Sudip Adhikari, Rucheng Zhu, Masayoshi Umeno

  KEYWORDS: Graphene, Direct Synthesis, Microwave Plasma CVD, Photovoltaics

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.9 No.10, October 26, 2021

  ABSTRACT: Graphene thin films synthesized directly at low temperature (550˚C) on silicon substrate by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using the cover on substrates for avoiding plasma emission ultraviolet ray’s effect during film deposition. Analytical methods such as Raman spectroscopy, Transmission electron microscopy (TEM) and Scanning electron microscopy (SEM), four-point probe method, and JASCO V-570 UV/VIS/NIR spectrophotometer were employed to characterize the properties of the graphene films. Here, we report that it is possible to grow graphene directly on the silicon substrate (without using catalyst) due to the high radical density of MW SWP CVD. Furthermore, we fabricated graphene/silicon Schottky junction solar cells with an efficiency of up to 6.39%. Compared to conventional silicon solar cells, the fabrication process is greatly simplified; just graphene is synthesized directly on n-type crystalline Si substrate at low temperate.