Article citationsMore>>

Gessert, T.A., Mason, A.R., Reedy, R.C., Matson, R., Coutts, T.J. and Sheldon, P. (1995) Development of Rf Sputtered, Cu-Doped ZnTe for Use as a Contact Interface Layer to p-CdTe. Journal of Electronic Materials, 24, 1443-1449.
https://doi.org/10.1007/BF02655462

has been cited by the following article:

• TITLE: Photovoltaic Application Study of Zinc Telluride Thin Films Grown by Chemical Bath Deposition Method

  AUTHORS: Kisan C. Rathod, Pradip D. Kamble, Kallappa R. Sanadi, Ganesh S. Kamble, Muddsar L. Guar, Kalyanrao M. Garadkar

  KEYWORDS: CBD, Thin Film, Photovoltaic Cell, I-V, C-V in Dark, Barrier Height

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.11 No.8, August 27, 2021

  ABSTRACT: Photovoltaic solar thin films zinc telluride studies on chemically deposited have been carried out to assess its suitability for use in the conversion of solar energy to electrical energy. The configuration of fabricated cell is n-ZnTe| NaOH (0.1M) + S(0.1M) + Na2S (0.1M)|C(graphite). The study shows that ZnTe thin films are n-type conductivity. The junction ideality factor was found to be 2.87. The flat band potential is found to be -0.652 V. The barrier height value was found to be 0.583 eV. The study of the power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 150 mV, 25.6 μA, 24.86% and 0.49%, respectively. The photovoltaic cell characterization of the thin films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output characteristics.