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Roy, U.N., Camarda, G.S., Cui, Y., Gul, R., Hossain, A., Yang, G., Okobiah, O.K., Egarievwe, S.U. and James, R.B. (2019) Growth of CdMnTe Free of Large Te Inclusions Using the Vertical Bridgman Technique. Journal of Crystal Growth, 509, 35-39.
https://doi.org/10.1016/j.jcrysgro.2018.12.026

has been cited by the following article:

• TITLE: Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

  AUTHORS: Ezekiel O. Agbalagba, Mebougna L. Drabo, Stephen U. Egarievwe, Utpal N. Roy, Amir H. Davis, Mordecai B. Israel, Parion L. Alexander, Ralph B. James

  KEYWORDS: CdZnTeSe, Chemical Etching, Energy Resolution, Gamma-Ray Spectroscopy, Infrared Imaging, Nuclear Detectors

  JOURNAL NAME: Materials Sciences and Applications, Vol.12 No.8, August 5, 2021

  ABSTRACT: Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 1010 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241Am.