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Bogatyryov, V.A. and Kachurin, G.A. (1977) The Creation Low Resistively n-Layers on InSb with Help the Impulse Laser Irradiation. Physics and Technics of Semiconductors, 11, 100-102. (In Russian).

has been cited by the following article:

• TITLE: Recent Research and Development Status of Relaxed Optics and Laser Technology: A Review

  AUTHORS: Petro Trokhimchuck

  KEYWORDS: Laser Technology, Relaxed Optics, Laser-Induced Processes, Laser Implantation, Heterostructures, Cascade Models, Structural Coherence

  JOURNAL NAME: Optics and Photonics Journal, Vol.11 No.7, July 28, 2021

  ABSTRACT: It is shown that for laser technologies it was necessary to create a new branch of physics: Relaxed Optics (synthesis of methods of the physical optics, quantum electronics, physical chemistry, physics of irreversible phenomena in unitary system). It is allowed to explain complex chain processes of interaction light and matter. Possible applications of Relaxed Optical methods for the modeling of the laser-induced processes phenomena, including laser implantation (surface and subsurface processes), laser-induced optical breakdown (volume processes) and laser annealing of radiation and other defects in solid, are discussed. Perspectives of using these methods for the creation of new laser technologies, including creation new types of optoelectronic devices (heterostructures, diffraction lattices, etc.), resolution the problems of metallurgy, material science, painting, architecture and a building, are analyzed.