TITLE:
New Procedure to Obtain Specific and High Absorbent Silicon Nanotextures: Inverted Pyramids, Cubic Nano-Microholes, Spiroconical Nano-Microholes and Rhombohedral-Stared Nanosheet Bouquets (Nanobuckets)
AUTHORS:
Ndeye Coumba Y. Fall, Moussa Touré, Remi Ndioukane, Abdoul Kadri Diallo, Diouma Kobor, Marcel Pasquinelli
KEYWORDS:
Silicon Nanotextures, New Procedure, Etching, Reflectance, Absorption
JOURNAL NAME:
Journal of Modern Physics,
Vol.12 No.9,
July
19,
2021
ABSTRACT: The present work relates to a process for silicon surface texturing for preparing large-area, silicon nanotextures on silicon substrates at ambient temperature by assisted chemical etching. A novel strategy comprises of two fundamental steps (metal-assisted chemical etching (MACE) and solution post-treatment) of using the silver catalyst to obtain specific nano- or micro-textures. The strategy is based on metal-induced (Ag) local oxidation and dissolution of a silicon substrate in three different concentrations of aqueous fluoride solution with the post-treatment solution. The etching technique is dependent on the etching time and concentration of aqueous fluoride solution. Therefore, detailed scanning electron microscopy observations reveal specifics shapes as inverted pyramids, cubic nano-microholes, spiroconical nano-microholes and rhombohedral-stared nanosheet bouquets (called Nanobukets), obtained for the first time on a (100) silicon surface by this new variant of the MACE method named Double Etching Method (DEM). Silicon nanostructures are used in many nanotechnology applications such as nano-microelectronics, optoelectronics or biomedical applications. UV-Visible spectrometry measurements carried out made it possible to obtain the lowest reflectance and highest absorbance values who are 3% and 97%, respectively for the rhomboedral-stared nanosheet bouquets on (100) crystalline silicon substrates in the UV-visible-NIR wavelength range from 300 to 1200 nm.