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Chiu, C.H., Yen, H.H., Chao, C.L., Li, Z.Y., Yu, P.C., Kuo, H.C., et al. (2011) Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on a SiO2 Nanorod-Array Patterned Sapphire Template. Applied Physics Letters, 93, Article ID: 081108.
https://doi.org/10.1063/1.2969062

has been cited by the following article:

• TITLE: Improving the Light Extraction Efficiency of GaN-Based Light-Emitting Diode

  AUTHORS: Lianjun Zhang, Zhongqi Fan, Gang Liu

  KEYWORDS: Light Emitting Diodes, Light Extraction Efficiency, Photonic Crystals, Epitaxial Lateral Overgrowth

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.9 No.2, May 10, 2021

  ABSTRACT: The light extraction efficiency caused by total internal reflection is low. Based on the analysis of the existing technology, a new design scheme is proposed in this paper to improve the light extraction efficiency. The air gap photonic crystal is embedded on the GaN-based patterned sapphire substrate, which can reduce line misalignment and improve light extraction efficiency. The internal structure of the GaN-based LED epitaxial layer is composed of an electron emission layer, a quantum well in the light-emitting recombination region, and an electron blocking layer. Experimental results show that this method significantly improves the extraction efficiency of LED light.