TITLE:
Comprehensive Analysis of CuIn1-xGaxSe2 Based Solar Cells with Zn1-yMgyO Buffer Layer
AUTHORS:
Soumaïla Ouédraogo, Marcel Bawindsom Kébré, Ariel Teyou Ngoupo, Daouda Oubda, François Zougmoré
KEYWORDS:
Device Modeling, Zn(Mg, O), Cu(In, Ga)Se2, Interface Sates, Conduction Band Offset
JOURNAL NAME:
Materials Sciences and Applications,
Vol.11 No.12,
December
30,
2020
ABSTRACT: The development of cadmium-free CIGS solar cells with high conversion efficiency is crucial due to the toxicity of cadmium. Zinc-based buffer layers seem to be the most promising. In this paper, a numerical analysis using SCAPS-1D software was used to explore the Zn(Mg,O) layer as an alternative to the toxic CdS layer. The effect of several properties such as thickness, doping, Mg concentration of the Zn(Mg,O) layer on the current-voltage parameters was explored and their optimal values were proposed. The simulation results reveal that the optimal value of the ZMO layer thickness is approximately 40 nm, the doping at 1017 cm-3 and an Mg composition between 0.15 and 0.2. In addition, the effect of Gallium (Ga) content in the absorber as well as the Zn(Mg,O)/CIGS interface properties on the solar cell’s performance was examined. The results show that contrary to the CdS buffer layer, the best electrical characteristics of the ZMO/CIGS heterojunction are obtained using a Ga-content equal to 0.4 and high interface defect density or unfavorable band alignment may be the causes of poor performances of Zn(Mg,O)/CIGS solar cells in the case of low and high Mg-contents.