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Li, Z.W., Wang, X., Shen, Z.H., Lu, J. and Ni, X.W. (2015) Mechanisms for the Millisecond Laser-Induced Functional Damage to Silicon Charge-Coupled Imaging Sensors. Applied Optics, 54, 378-388. https://doi.org/10.1364/AO.54.000378

has been cited by the following article:

• TITLE: Investigating the Thermal Stress of Millisecond Pulsed Laser Irradiation on Charge-Coupled Devices

  AUTHORS: Chunxu Jiang, Yong Tan, Bo Peng, Guangyong Jin, Hongxing Cai, Zhong Lv

  KEYWORDS: Millisecond Pulsed Laser, Charge-Coupled Device, Thermal Stress, Raman Spectroscopy

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.8 No.11, November 26, 2020

  ABSTRACT: In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation.