Article citationsMore>>

Portail, M., Zielinski, M., Chassagne, T., Chauveau, H., Roy, S. and De Mierry, P. (2009) Highly Sensitive Determination of N+ Doping Level in 3C-SiC and GaN Epilayers by Fourier Transform Infrared Spectroscopy. Materials Science and Engineering: B, 165, 42-46.
https://doi.org/10.1016/j.mseb.2009.03.014

has been cited by the following article:

• TITLE: Simulations of Heterojunction and Tandem Solar Cells Based on 3C Silicon Carbide

  AUTHORS: Kabe Moyème, Lare Yendoubé, Ottaviani Laurent, Pasquinelli Marcel, Toure Moussa

  KEYWORDS: Crystalline Silicon Carbide 3C-SiC, Simulation, Tandem Solar Cells

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.8 No.11, November 16, 2020

  ABSTRACT: In order to improve the efficiency of solar cells based on cubic silicon carbide (3C-SiC), one heterojunction solar cell and two tandem structures were simulated under AM1.5 illumination using SCAPS software. The cells’ performances were studied according to the thickness of the silicon carbide layers. Simulation results allowed to achieve an efficiency of 22.03% with a tandem junction structure using an optimal thickness of 3C-SiC layer.