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Huang, J., Xu, K., Gong, X.J., Wang, J.F., Fan, Y.M., Liu, J.Q., Zeng, X.H., Ren, G.Q., Zhou, T.F. and Yang, H. (2011) Dislocation Cross-Slip in GaN Single Crystals Under Nanoindentation. Applied Physics Letters, 98, Article ID: 221906.
https://doi.org/10.1063/1.3593381

has been cited by the following article:

• TITLE: Real and Fitted Spherical Indentations

  AUTHORS: Gerd Kaupp

  KEYWORDS: Spherical Indentations, Correct Formula, Phase-Transition Onset Pressure, False Johnson Formula, Detection of Data Fittings

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.10 No.10, October 10, 2020

  ABSTRACT: Spherical indentations that rely on original date are analyzed with the physically correct mathematical formula and its integration that take into account the radius over depth changes upon penetration. Linear plots, phase-transition onsets, energies, and pressures are algebraically obtained for germanium, zinc-oxide and gallium-nitride. There are low pressure phase-transitions that correspond to, or are not resolved by hydrostatic anvil onset pressures. This enables the attribution of polymorph structures, by comparing with known structures from pulsed laser deposition or molecular beam epitaxy and twinning. The spherical indentation is the easiest way for the synthesis and further characterization of polymorphs, now available in pure form under diamond calotte and in contact with their corresponding less dense polymorph. The unprecedented results and new possibilities require loading curves from experimental data. These are now easily distinguished from data that are “fitted” to make them concur with widely used unphysical Johnson’s formula for spheres (“P = (4/3)h3/2R1/2E∗”) not taking care of the R/h variation. Its challenge is indispensable, because its use involves “fitting equations” for making the data concur. These faked reports (no “experimental” data) provide dangerous false moduli and theories. The fitted spherical indentation reports with radii ranging from 4 to 250 μm are identified for PDMS, GaAs, Al, Si, SiC, MgO, and Steel. The detailed analysis reveals characteristic features.