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Jerome, J.W. and Kerkhoven, T. (1991) A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model. SIAM Journal on Numerical Analysis, 28, 403-422.
https://doi.org/10.1137/0728023

has been cited by the following article:

• TITLE: PNP Models with the Same Positively Charged Valence

  AUTHORS: Guojian Lin

  KEYWORDS: Poisson-Nernst-Planck Model, Singular Perturbation, Boundary Layer

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.8 No.9, September 27, 2020

  ABSTRACT: A steady-state Poisson-Nernst-Planck model with n ion species is studied under the assumption that n - 1 positively charged ion species have the same valence and there is only one negatively charged ion species. By re-scaling, this model can be viewed as a standard singularly perturbed system. Based on the explicit formulae for the solutions of its limit slow system and singular perturbation methods, the existence of the solutions is analyzed.