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Xu, H.Y., Wan, C.P. and Ao, J.-P. (2019) The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions. Materials Science Forum, 954, 104-108. https://doi.org/10.4028/www.scientific.net/MSF.954.104

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