TITLE:
Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell
AUTHORS:
Meimouna Mint Sidi Dede, Mamadou Lamine Ba, Mamour Amadou Ba, Mor Ndiaye, Sega Gueye, El Hadj Sow, Ibrahima Diatta, Masse Samba Diop, Mamadou Wade, Gregoire Sissoko
KEYWORDS:
Silicon Solar Cell, Absorption Coefficient, Back Surface Recombination, Optimum Thickness
JOURNAL NAME:
Energy and Power Engineering,
Vol.12 No.7,
July
31,
2020
ABSTRACT: The
monochromatic absorption coefficient of silicon, inducing the light penetration
depth into the base of the solar cell, is used to determine the optimum
thickness necessary for the production of a large photocurrent. The
absorption-generation-diffusion and recombination (bulk and surface) phenomena
are taken into account in the excess minority carrier continuity equation. The
solution of this equation gives the photocurrent according to absorption and electronic parameters. Then from the
obtained short circuit photocurrent expression, excess minority carrier
back surface recombination velocity is determined, function of the
monochromatic absorption coefficient at a given wavelength. This latter plotted
versus base thickness yields the optimum thickness of an n+-p-p+ solar cell, for each wavelength, which is in the range close to the energy band
gap of the silicon material. This study provides a tool for improvement solar
cell manufacture processes, through the mathematical relationship obtained from
the thickness limit according to the absorption coefficient that allows base
width optimization.