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Diouf, M.S., et al. (2016) Study of the Series Resistance of a Solar Cell Silicon under Magnetic Field from of Junction Surface Recombination Velocity of Minority Charge Carriers at the Junction Limiting the Open Circuit (Sfoc). Journal of Scientific and Engineering Research, 3, 289-297.
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has been cited by the following article:

• TITLE: n+-p-p+ Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

  AUTHORS: Cheikh Thiaw, Mamadou Lamine Ba, Mamour Amadou Ba, Gora Diop, Ibrahima Diatta, Mor Ndiaye, Gregoire Sissoko

  KEYWORDS: Silicon Solar Cell, Magnetotransport, Surface Recombination Velocity, Base Thickness

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.12 No.7, July 24, 2020

  ABSTRACT: Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n+-p-p+ under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier’s recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.