TITLE:
Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se2 Based Solar Cells
AUTHORS:
Soumaïla Ouédraogo, Marcel Bawindsom Kébré, Ariel Teyou Ngoupo, Daouda Oubda, François Zougmoré, Jean-Marie Ndjaka
KEYWORDS:
Cu(In, Ga)Se2, Band-Gap, Acceptor Density, Defect Density, Mo/CIGS-Interface
JOURNAL NAME:
Advances in Materials Physics and Chemistry,
Vol.10 No.7,
July
24,
2020
ABSTRACT: In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 1016 cm−3 and the defect density less than 1014 cm−3. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe2 layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm2 in the current density (Jsc) depending on the absorber thickness is obtained.