Article citationsMore>>

Gao, G., Gao, W., Cannuccia, E., Taha-Tijerina, J., Balicas, L., Mathkar, A., Narayanan, T.N., Liu, Z., Gupta, B.K., Peng, J., Yin, Y., Rubio, A. and Ajayan, P.M. (2012) Artificially Stacked Atomic Layers: Toward New Van der waals Solids. Nano Letters, 12, 3518-3525.
https://doi.org/10.1021/nl301061b

has been cited by the following article:

• TITLE: Dielectric Properties of Multi-Layers Hexagonal Boron Nitride

  AUTHORS: M. Fazail Khalid, Ibtisam Riaz, Rashid Jalil, Usamah Mahmood, Rehan Rahat Mir, Hafiz Amir Sohail

  KEYWORDS: Hexagonal Boron Nitride (h-BN), Boron Nitride Nanosheets (BNNs), Dimethylformamide (DMF), Isopropyl Alcohol (IPA)

  JOURNAL NAME: Materials Sciences and Applications, Vol.11 No.6, June 3, 2020

  ABSTRACT: A higher value of the dielectric constant of h-BN makes it quite favourable material in energy storing device. The variation in dielectric constant was observed as a function of thickness. In this research work multilayers of Hexagonal Boron Nitride (h-BN) was fabricated by using the Chemical exfoliation method. Two solvents Dimethylformamide (DMF) and Isopropyl Alcohol (IPA) were used for the exfoliation of h-BN. Successful sonication of hexagonal boron nitride led to the formation of Boron Nitride nanosheets (BNNs). The stable dispersibility of h-BN in Dimethylformamide and Isopropyl Alcohol was confirmed by UV Visible Spectroscopy, X-ray diffraction (XRD) and Scanning electron microscopy (SEM) confirm the mono crystallite structure (002) and nanoflakes like morphology of h-BN respectively. This appropriate strategy offered a feasible route to produce multilayer of hexagonal boron nitride. After the successful fabrication of h-BN multilayers its dielectric properties were calculated by using LCR meter. Profilometer revealed the variation in thickness and value of Dielectric constant was calculated by using its formula.