TITLE:
Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System
AUTHORS:
Adama Ouedraogo, Boukaré Ouedraogo, Boureima Kaboré, Dieudonné Joseph Bathiebo
KEYWORDS:
Polycrystalline Silicon Solar Cell, Space Charge Region, Photo-Current, Photo-Voltage, Conversion Efficiency, pn-Junction Capacitance, External Electrical Field
JOURNAL NAME:
Energy and Power Engineering,
Vol.12 No.5,
May
11,
2020
ABSTRACT: The
state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the
junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a
theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell
under an integration of the external electrical field source. An external
electrical source is integrated in a solar cell system. The electronic carriers
charge generated in the solar cell crossed mainly the junction with the great strength external electrical field.
In open circuit, this crossing of the electronic charge carriers causes the
thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the
photo-voltage for different external electrical fields. The electric field
causes the decrease of the photo-voltage mainly the open-circuit photo-voltage.
The decrease of the photo-voltage translates the narrowing of the Space Charge
Region (SCR). The average value of the external electric field used in this
study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external
electrical field production source. The increase of the electrical field causes
rather the narrowing of the SCR. That can provide an improvement of the solar
cell’s electrical outputs.