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Y.-H. Lee and J.-H. Lee. “Scalable Growth of Free-Stand- ing Gaphene Wafers with Copper (Cu) Catalyst on SiO2/Si Substrates: Thermal Conductivity of the Wafers,” Applied Physics Letters, Vol. 96, No. 8, 2010, p. 083101. doi:10.1063/1.3324698

has been cited by the following article:

• TITLE: Multilayer Graphene Synthesized by CVD Using Liquid Hexane as the Carbon Precursor

  AUTHORS: Claudia Bautista Flores, Doroteo Mendoza López

  KEYWORDS: Graphene, Chemical Vapor Deposition, Hexane, Transmittance

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.1 No.4, November 28, 2011

  ABSTRACT: We produce multilayer graphene by the Chemical Vapor Deposition (CVD) method at atmospheric pressure and 1000°C, using flexible copper substrates as catalyst and liquid hexane as the source of carbon. We designed an optical device to measure the transmittance of the carbon films; with this information we calculate that the approximate number of layers is 11.