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Ouaida, R., Berthou, M., León, J., Perpinà, X., Oge, S., Brosselard, P. and Joubert, C. (2014) Gate Oxide Degradation of SiC MOSFET in Switching Conditions. IEEE Electron Devices Letters, 35, 1284-1286.
https://doi.org/10.1109/LED.2014.2361674

has been cited by the following article:

• TITLE: Investigation of Inhomogeneity in Single Crystal SiC Wafers Using C-Scan Acoustic Scanning Microscopy

  AUTHORS: Ibrahim M. Abdel-Motaleb

  KEYWORDS: SiC, Lattice Defects, Acoustic Scanning Microscopy, ASM, Wafers

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.9 No.1, February 27, 2020

  ABSTRACT: In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the defects of three SiC samples. The acoustic images indicate that numerous defects with different shapes and areasexist in the wafers. Some of the defects have areas of more than 100,000 μm2. The number of defects ranges from 1 to 50 defects/wafer. Defect mapping is essential for defect repairing or avoidance.This work shows that ASM can locate the precise positions of the crystallographic defects, whichenablesdefects repair and yield enhancement.