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Ndiaye, E.H., Sahin, G., Dieng, M., Thiam, A.Y, Diallo, H.L., Ndiaye, M. and Sissoko, G. (2015) Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation. Journal of Applied Mathematics and Physics, 3, 1522-1535.
https://doi.org/10.4236/jamp.2015.311177
http://www.scirp.org/journal/jamp

has been cited by the following article:

• TITLE: Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles

  AUTHORS: Ousmane Sow, Mamadou Lamine Ba, Mohamed Abderrahim Ould El Moujtaba, Youssou Traore, El Hadji Sow, Cheikh Tidiane Sarr, Masse Samba Diop, Grégoire Sissoko

  KEYWORDS: Silicon Solar Cell, Flow Irradiation Energy, Recombination Velocity, Optimum Base Thickness

  JOURNAL NAME: Energy and Power Engineering, Vol.12 No.1, December 31, 2019

  ABSTRACT: In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy flow of charged particles. The recombination velocity at the junction corresponding to the maximum power point was also deduced.