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J. C. Chou, H. M. Tsai, C. N. Shiao and J. S. Lin, “Study and Simulation of the Drift Behavior of Hydrogenated Amorphous Silicon Gate pH-ISFET,” Sensors and Actuators B: Chemical, Vol. 62, No. 2, 2000, pp. 97-101. doi:10.1016/S0925-4005(99)00366-4

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