Article citationsMore>>

S. jamasb, S. D. Collins and R. L Smith, “A Physiccal Model for Threshold Voltage Insability in SI3N4 Gate H+ Sensitive FETs,” IEEE Tranactions on Electron Devices, Vol. 45 No. 6, 1998, pp. 1239-1245. doi:10.1109/16.678525

has been cited by the following article:

SCIRP Newsletter
Copyright © 2006-2026 Scientific Research Publishing Inc. All Rights Reserved.
Top