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M. Wraback, H. Shen, J. C. Carrano, T. Li, J. C. Campbell, M. J. Schurman and I. T. Ferguson, “Time-Resolved Electroabsorption Measurement of the Electron Velocity-Field Characteristic in GaN,” Applied Physics Letters, Vol. 76, No. 9, 2000, pp. 1155-1157. doi:10.1063/1.125968

has been cited by the following article:

• TITLE: Temperature and Doping Dependencies of the Transport Properties within GaN and GaAs

  AUTHORS: F. M. Abou El-Ela, A. Z. Mohamed

  KEYWORDS: Monte Carlo, Steady State, Temperature Dependence, Doping Dependence

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.11, November 23, 2011

  ABSTRACT: Temperature and doping dependencies of the transport properties have been calculated using an ensemble Monte Carlo simulation. We consider the polar optical phonon, acoustic phonons, piezoelectric, intervalley scatterings and Charged impurity scattering model of Ridley; furthermore, a non nonparabolic three-valley model is used. Our simulation results have shown that the electron velocity in GaN is less sensitive to changes in temperature than that associated with GaAs. Also it is found that GaN exhibits high peak drift velocity at room temperature, 2.8 × 105m/s, at doping concentration of 1 × 1020 m–3and the electron drift velocity relaxes to the saturation value of 1.3 × 105 m/s which is much larger than that of GaAs. The weakening of the phonon emission rate at low temperature explains the extremely high low field mobility. Our results suggest that the transport characteristics of GaN are superior to that of GaAs, over a wide range of temperatures, from 100 K to 700 K, and doping concentrations, up to 1 × 1025 m–3