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V. I. Perel, S. A. Tarasenko, I. N. Yassievich, S. D. Ganichev, V. V. Bel’kov and W. Prettl, “Spin-Dependent Tunneling through a Symmetric Semiconductor Barrier,” Physical Review B, Vol. 67, No. 20, 2003, p. R201304. doi:10.1103/PhysRevB.67.201304

has been cited by the following article:

• TITLE: Spontaneous Spin Polarization of Electrons by Diluted Magnetic Heterostructures

  AUTHORS: Chang Woo Lee, Amalorpavam John Peter

  KEYWORDS: Spin Polarized Transport, Spin Injection, Spin-Orbit Coupling, Resonant Tunneling

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.11, November 23, 2011

  ABSTRACT: The spin dependent electron transmission phenomenon in a diluted resonant semiconductor heterostructure is employed theoretically to investigate the output transmission current polarization at zero magnetic field. Transparency of electron transmission is calculated as a function of electron energy and the well width, within the one electron band approximation along with the spin orbit interaction. Enhanced spin-polarized resonant tunneling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level is observed. We predict that a spin-polarized current spontaneously emerges in this heterostructure and we estimate theoretically that the polarization can reach 40%. This effect could be employed in the fabrication of spin filters, spin injectors and detectors based on non-magnetic semiconductors.