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Diouf, M.S., Ly, I., Wade, M., Diatta, I., Traore, Y., Ndiaye, M. and Sissoko, G. (2016) The Temperature Effect on the Recombination Velocity at the Junction Initiating the Short-Circuit Condition (Sfcc) of a Silicon Solar Cell under External Electric Field. Journal of Scientific and Engineering Research, 3, 410-420.

has been cited by the following article:

• TITLE: Shunt Resistance Determination in a Silicon Solar Cell: Effect of Flow Irradiation Energy and Base Thickness

  AUTHORS: Ousmane Sow, Mamadou Lamine Ba, Hamet Yoro Ba, Mohamed Abderrahim Ould El Moujtaba, Youssou Traore, Masse Samba Diop, Habiboullah Lemrabott, Mamadou Wade, Grégoire Sissoko

  KEYWORDS: Silicon Solar Cell, Irradiation, Recombination Velocity, Shunt Resistance, Optimum Base Thickness

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.11 No.12, December 5, 2019

  ABSTRACT: The concept of the recombination of the minority carrier’s recombination velocity at the junction and in the rear, is used for determination, optimum thickness and then shunt resistance in the base of the silicon solar cell, maintained in steady state and under energy from the irradiation flow of charged particles. Resistance shunt is obtained and modeled through a relationship expressed according to the flow and energy of irradiation imposed on the solar cell.