TITLE:
Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination
AUTHORS:
Nouh Mohamed Moctar Ould Mohamed, Ousmane Sow, Sega Gueye, Youssou Traore, Ibrahima Diatta, Amary Thiam, Mamour Amadou Ba, Richard Mane, Ibrahima Ly, Gregoire Sissoko
KEYWORDS:
Silicon Solar Cell, Diffusion Coefficient, Surface Recombination Velocity, Optimum Base Thickness, Lorentz and Umklapp Processes
JOURNAL NAME:
Journal of Modern Physics,
Vol.10 No.13,
November
25,
2019
ABSTRACT: The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.