Article citationsMore>>

Cuevas, A., Fossum, J.G. and Young, R.T. (1985) Influence of the Dopant Density Profile on Minority-Carrier Current in Shallow, Heavily Doped Emitters of Silicon Bipolar Devices. Solid-State Electronics, 28, 247-254.
https://doi.org/10.1016/0038-1101(85)90005-X

has been cited by the following article:

• TITLE: Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

  AUTHORS: Masse Samba Diop, Hamet Yoro Ba, Ndeye Thiam, Ibrahima Diatta, Youssou Traore, Mamadou Lamine Ba, El Hadji Sow, Oulymata Mballo, Grégoire Sissoko

  KEYWORDS: Silicon Solar Cell, Surface Recombination Velocity, Diffusion Coefficient, Doping Rate, Base Thickness

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.9 No.4, October 9, 2019

  ABSTRACT: New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.