TITLE:
In Situ Imposing Bias ATR-FTIR Observation at Hydrogen Terminated Si(111) Electrode Surface-Modified with Adsorbed Monolayer
AUTHORS:
Toshihito Ohtake, Ken-ichiro Iijima
KEYWORDS:
Semiconductor Electrode, Silicon, Hydrogen Termination, Oxidization, In Situ ATR-FTIR
JOURNAL NAME:
Journal of Surface Engineered Materials and Advanced Technology,
Vol.9 No.3,
June
14,
2019
ABSTRACT: Since hydrogen-terminated Si surface has hydrophobicity, it is expected that adsorbed monomolecular film of surfactant will be formed on the Si surface in aqueous solution containing the surfactant. Such an adsorbed monolayer film is very effective for the development of a functional electrode. In this study, we have investigated the state of adsorption about an aerosol OT as the monolayer on the electrode surface and its orientation with hydrogen-terminated Si(111) surface by in situ ATR-FTIR spectroscopy. At this time, in situ observation performed while imposing bias to the electrode. The results suggested that the aerosol OT were desorbed by the oxidation of back-bonds in the Si atoms on the electrode surface under the imposing noble potential, although no change was observed especially when imposing less-noble potential.