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Lin, J.Y., Wan, C.C., Wang, Y.Y. and Feng, H.P. (2007) Void Defect Reduction after Chemical Mechanical Planarization of Trenches Filled by Direct/Pulse Plating. Journal of the Electrochemical Society, 154, D139-D144.
https://doi.org/10.1149/1.2409869

has been cited by the following article:

• TITLE: Electroplating: Applications in the Semiconductor Industry

  AUTHORS: Jivaan Kishore Jhothiraman, Rajesh Balachandran

  KEYWORDS: Electroplating, Copper, Interconnects, Modeling

  JOURNAL NAME: Advances in Chemical Engineering and Science, Vol.9 No.2, April 30, 2019

  ABSTRACT: There is a lot of research that has been done on electroplating of metals depending on the type of application. In this chapter, the importance of this technique to the semiconductor industry is discussed in detail from an experimental as well as a modeling standpoint. In particular, the effect of solution variables i.e. chloride, accelerator, suppressor on copper electrodeposition is discussed. This knowledge is applied to achieve a defect-free, bottom-up metal/copper fill that eventually, is one of the most critical processes in this billion-dollar industry.