Article citationsMore>>

M. Wren and T. J. Brazil, “Experimental Class-F Power Amplifier Design Using Computationally Efficient and Accurate Large-Signal pHEMT Model,” IEEE Transac- tions on Microwave Theory and Techniques, Vol. 53, No. 5, May 2005, pp. 1723-1731. doi:10.1109/TMTT.2005.847108

has been cited by the following article:

• TITLE: Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications

  AUTHORS: Masoud Sabaghi, Seyed Reza Hadianamrei, Mehdi Rahnama, Maziyar Niyakan Lahiji

  KEYWORDS: ADS, Class F Power Amplifier, LD MOS, WCDMA

  JOURNAL NAME: International Journal of Communications, Network and System Sciences, Vol.4 No.10, October 12, 2011

  ABSTRACT: The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.