Article citationsMore>>

M. Zhang, R. Scholz, H. Weng and C. Lin, “Defects and Voids in He Implanted Si Studied by Slow Positron Annihilation and Transmission Electron Microscopy,” Applied Physics A, Vol. 66, No. 5, 1998, pp. 521-525. doi:10.1007/s003390050707

has been cited by the following article:

SCIRP Newsletter
Copyright © 2006-2026 Scientific Research Publishing Inc. All Rights Reserved.
Top