Article citationsMore>>

S. Shikata, S. Fujii, L. Wei and S. Tanigawa, “Effect of Annealing Method on Vacancy Type Defects in Si Im-planted GaAs Studies by a Slow Positron Beam,” Journal of Applied Physics, Vol. 31, 1992, pp. 732-736. doi:10.1143/JJAP.31.732

has been cited by the following article:

SCIRP Newsletter
Copyright © 2006-2026 Scientific Research Publishing Inc. All Rights Reserved.
Top